• 专利附录
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    • 专利摘要:
    Described is a method of making a neutron detector component (1) comprising a neutron detecting boron carbide layer (2) comprising bores disposed on a substantially neutron transparent substrate (3). Furthermore, a neutron detector component (1) is described, the use thereof for neutron detection and a neutron detector device (30) comprising a number of neutron detector components (1) arranged in a stack (32). The method comprises placing (120) the substantially neutron-transparent substrate (3) and at least one source of coating material (16) comprising carbon and boron within a coating chamber (10). The coating chamber (10) is then evacuated (146) to a pressure of at most 6 mPa and at least one coating surface (3a) of the substantially neutron transparent substrate (3) is heated (144) to an elevated temperature of at least 300 ° C to about 660 ° C. The method further comprises initiating (148) the coating of the neutron detecting boron carbide layer comprising boron on the substantially neutron transparent substrate (3) by physical vapor deposition in the form of magnetron sputtering using the minimum coating material source (16) when said pressure and elevated temperature have coating (150) the neutron detecting boron carbide layer (2) comprising boron to a desired thickness (t), and wherein the content of boron in the neutron detecting boron carbide layer (2) is at least about 60 at.% The method enables improved adhesion of the boron carbide layer to the substantially neutron-transparent substrate. Publication image: Fig. 1
    公开号:SE535805C2
    申请号:SE1250745
    申请日:2011-06-30
    公开日:2012-12-27
    发明作者:Lars Hultman；Jens Birch；Carina Hoeglund
    申请人:Jens Birch；European Spallation Source Ess Ab；Carina Hoeglund；Lars Hultman；
    IPC主号:
    专利说明:

    5 30 535 805 the use of gaseous materials, generally associated with process risks and also high material costs.
    Summary Although the theoretical neutron detection efficiency would be higher with pure boron layers comprising boron-10 (1 ° B), boron carbide layers comprising boron-10 are preferred for stability reasons, both from a mechanical point of view and from a contamination point of view. Physical vapor deposition (PVD) is associated with lower process risk and material costs than CVD. However, other problems arise when attempting to use PVD to make boron carbide layers comprising boron-10. For example, when a neutron detecting boron carbide layer comprising boron is provided by direct use of conventional PVD, the adhesion to the underlying substrate usually becomes worse than desired, causing the layer to agitate or prevent the formation of a continuous film. This can be a problem especially for layer thicknesses in the micrometer range, which thicknesses are typically desirable to be able to reach for neutron detection stability reasons, and when temperature sensitive substrates are used, such as aluminum, which is often a desirable material to use as a substrate.
    In view of the above, an object of the present document is thus to eliminate or at least reduce the problems of the prior art or at least to provide an alternative solution. A specific object is to provide a method for manufacturing neutron detector components based on PVD, wherein the neutron detector comprises a neutron detecting boron carbide layer comprising boron arranged on a substantially neutron transparent substrate. A further object is to provide a neutron detector component for use in a neutron detector, the use of such a neutron detector component for neutron detection and a neutron detection device comprising a number of neutron detector components arranged in a stack.
    The invention is defined by the attached independent requirements.
    Preferred embodiments appear from the dependent claims and in the following description and drawings. According to a first aspect of the present invention, these and other objects are achieved by a method of making a neutron detector component comprising a neutron detecting boron carbide layer comprising boron 10 arranged on a substantially neutron transparent substrate, the method comprising: placing the substantially neutron-transparent substrate and at least one source of coating material comprising carbon and boron within a coating chamber. to evacuate the coating chamber to a pressure of not more than 6 mPa and to heat at least one coating surface of the substantially neutron-transparent substrate in the coating chamber to an elevated temperature of at least 300 ° C to about 660 ° C, to begin coating the neutron-detecting boron carbide layer -10 on the substantially neutron-transparent substrate by physical vapor deposition in the form of magnetron sputtering using the at least one coating material source when said pressure and said elevated temperature have been reached, and coating the neutron-detecting boron carbide layer comprising boron to a desired thickness of boron, and The neutron detecting boron carbide layer is at least about 60 at.%.
    By "boron-10" is meant here the borisotope '° B.
    By "substantially neutron transparent substrate" is meant a substrate made of such a material and having such a thickness that the number of neutrons absorbed by the substrate is less than 10% of the number of neutrons absorbed in the neutron detecting boron carbide layer, i.e. has 10% or lower neutron absorption than the neutron detecting boron carbide layer, which layer is provided on the substrate.
    It is understood that each heating of the substantially neutron-transparent substrate is done to a temperature lower than the melting temperature of the substrate.
    It should be noted that the order in which the steps in the procedure are described should not be construed as restrictive. Steps that are independent of each other can be performed in a different order and / or be partially or completely overlapping. The step of evacuating the coating chamber may, for example, overlap with the step of heating at least one coating surface of the substantially neutron-transparent substrate.
    Experiments have confirmed that the process enables improved adhesion of the boron carbide layer to the substantially neutron transparent substrate, thereby enabling in practice the use of PVD to provide neutron detecting layers based on the boron micrometer range and on aluminum substrates. Although there is no desire to limit oneself to a specific explanation of the underlying causes, it is believed that one reason for poor adhesion is the presence of contaminants in the boron carbide layer and on the substrate surface, which are largely removed by the process. In addition, there is an increased risk of the boron carbide layer fl from the substrate with increasing stresses in the coating. The present method allows the use of lower temperatures during the coating, compared to conventional methods, which reduces such stresses in the boron carbide layer. In addition, the presence of contaminants in the boron carbide layer is also associated with a decreased neutron detection efficiency of the boron carbide layer. An additional advantage of the method is because it enables improved neutron detection efficiency.
    The method may further comprise heating at least one coating surface of the substantially neutron-transparent substrate during the coating of the neutron-detecting boron carbide layer.
    The heating of at least one coating surface of the substantially neutron-transparent substrate during the coating of the neutron-detecting boron carbide layer may comprise heating to at least said elevated temperature.
    The heating of at least one coating surface of the substantially neutron-transparent substrate may comprise specific heating thereof.
    By "specific heating" of at least one coating surface of the substantially neutron-transparent substrate is meant here that the heating is specifically intended to heat the substrate and does not only follow from the PVD process as such. The specific heating can be effected, for example, by direct heating of the substrate by, for example, conducting a strong electric current through the substrate, by indirect heating by means of, for example, radiation from a heating element specifically arranged to heat the substrate and / or by heating the substrate by using excited particles.
    The substantially neutron-transparent substrate may be a temperature sensitive substrate having a melting temperature not exceeding about 660 ° C.
    The method may further comprise: removing contaminants from the coating chamber, with the substantially neutron-transparent substrate and the coating material source placed inside, before and / or during the evacuation of the coating chamber.
    "Pollution" here generally refers to a substance whose presence is undesirable or which occurs in an undesirable amount in the coating chamber and which, if present during manufacture, would have a detrimental effect on the resulting product. Impurities typically include the elements H, C, N, O, Ar, Ne or Kr, and compounds consisting of these elements, for example H 2 O, OH, O 2, H 2, CH 4, N 2, CO 2, which typically occur bound to the walls of the coating chamber and / or the substrate and / or occurs on or in the coating material source and / or occurs in gases used in the FVO process.
    By "removing contaminants from the coating chamber" is meant to include the removal of contaminants that may occur anywhere within the chamber, which includes contaminants bound to the walls of the coating chamber and / or contaminants present on / in the coating material source, and / or impurities that are bound to or present on / in the substantially neutron-transparent substrate.
    The step of removing contaminants from the coating chamber may involve heating and degassing the coating chamber while maintaining the temperature of the substantially neutron-transparent substrate below its melting temperature.
    The removal of contaminants from the coating chamber can be performed during the evacuation of the coating chamber. The heating of the coating chamber may involve the use of heat from the heating of at least one coating surface of the substantially neutron-transparent substrate.
    The heating of the coating chamber may involve the use of a separate heat source other than that used to heat at least one coating surface of the substantially neutron-transparent substrate.
    The heating of the coating chamber may comprise heating it to at least 100 ° C, or at least 200 ° C, or at least 300 ° C or at least 400 ° C, or at least 500 ° C, or at least 600 ° C.
    The removal of contaminants from the coating chamber may include the removal of H 2 O contaminants.
    H 2 O contaminants can be removed using a method specifically designed to reduce the amount of H 2 O contaminants, and may be selected from a group consisting of electron beam, infrared radiation, ultraviolet light and visible light radiation, ion radiation, contact with a resistive heating element or a combination of some of these methods.
    The temperature of at least one coating surface of the substantially neutron-transparent substrate may vary during the coating process, preferably above the elevated temperature, but even lower temperatures may be allowed. However, the temperature of the substrate should not be substantially lower than the elevated temperature and / or preferably lower than the elevated temperature only during a minor period of the coating process.
    Coating at higher temperatures, preferably as high as possible without exceeding the melting temperature of the substrate, can result in the neutron detecting boron carbide layer adhering better to the substantially neutron transparent substrate and also further reducing the level of impurities in the layer.
    The pressure may be at most 3 mPa, preferably at most 1.5 mPa or more preferably at most 0.75 mPa.
    The method may comprise coating the substantially neutron-transparent substrate on opposite coating surfaces. 10 15 20 25 30 535 805 7 Although coating on two sides may be desirable and advantageous for many applications, coating can also be performed on only one surface.
    The substantially neutron-transparent substrate may be electrically conductive.
    In the nuclear reaction between incoming neutrons and '° B in the neutron-detecting boron carbide layer:' ° B + n _ »71.: spatial resolution in a detection gas. The neutron detecting layer is thus left with a negative net charge, which can be compensated for by conducting electrons away from the boron carbide layer through the electrically conductive substantially neutron-transparent substrate.
    The substantially neutron-transparent substrate may comprise aluminum or aluminum alloys. Such an alloy is, for example, an alloy of Si-Al.
    The neutron detecting boron carbide layer may be electrically conductive.
    The conductivity of the neutron detecting boron carbide layer should be sufficient to neutralize the negative net charge in the boron carbide layer, which charge has arisen as a result of charged particles leaving the surface of the neutron detecting layer in connection with the reaction between neutrons and '° B.
    The desired thickness of the neutron detecting boron carbide layer may be less than about 4 microns, or less than about 3 microns, or less than about 2 microns, or less than about 1.5 microns, or less than about 1.3 microns, or less than about 1.2 pm, or less than about 1.1 pm.
    The desired thickness of the neutron detecting boron carbide layer may be at least about 0.2 microns, or at least about 0.4 microns, or at least about 0.6 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1 pm.
    The desired thickness of the neutron detecting boron carbide layer may be in a range from about 0.3 μm to about 1.8 μm, preferably in a range from about 0.5 μm to about 1.6 μm, more preferably in a range from about 0 μm. .7 μm to about 1.3 μm and most preferably in a range from about 0.9 μm to about 1.1 μm. The neutron-detecting boron carbide layer can be coated directly on the coating surface of the substantially neutron-transparent substrate.
    The neutron detecting boron carbide layer may be coated on an intermediate layer or gradient layer, such as an adhesion promoting layer.
    One or more intermediate layers or gradient layers may be present between the neutron detecting boron carbide layer and the substantially neutron transparent substrate. By using an intermediate layer or gradient layer, further improvement of the adhesion is possible.
    The neutro-detecting boron carbide layer may be a B4C layer.
    Coatings of B4C can be made abrasion resistant with thermal and chemical stability. By B4C is meant herein crystalline or amorphous compounds, or a combination thereof, consisting of B and C, where the amount of B ranges from about 70% to about 84% of the total number of B and C atoms, i.e. not including any impurities. A lower carbon content would result in lower stability of the coating in the longer term, since a coating rich in B is more reactive. The higher the carbon content of the boron carbide coating comprising bores, the lower the neutron detection efficiency of the coating.
    By "detection efficiency" is meant herein the number of neutrons detected relative to how many neutrons penetrate the neutron detecting boron carbide layer.
    The at least one source of coating material may comprise boron-10-enriched a4c (Wßtc).
    The at least one source of coating material may preferably consist essentially of boron-10-enriched B4C ('° B4C). B is normally a mixture of 20% ”B and 80% llß. Anrikai ”etc in practice usually has an ice content of about 70 at.% To about 84 at.%. Instead of using '° B4C as the sole source of coating material, separate sources with' ° B and C can be used during the coating process.
    In a second aspect, a neutron detector component, which can be prepared according to the method described above, is provided for use in a neutron detector, the neutron detector component (1) comprising a neutron detecting boron carbide layer comprising boron 10 arranged on a substantially neutron-transparent substrate, wherein The 535 805 neutron transparent substrate is a temperature sensitive substrate having a melting temperature of at most about 660 ° C.
    The substantially neutron-transparent substrate may be electrically conductive.
    The substantially neutron-transparent substrate may comprise aluminum or aluminum alloys.
    The neutron detecting boron carbide layer may be electrically conductive.
    The neutron detecting boron carbide layer may have a thickness of less than about 4 microns, or less than about 3 microns, or less than about 2 microns, or less than about 1.5 microns, or less than about 1.3 microns, or less than about 1.2 pm, or less than about 1.1 pm.
    The neutron detecting boron carbide layer may have a thickness of at least about 0.2 microns, or at least about 0.4 microns, or at least about 0.6 microns, or at least about 0.8 microns, or at least about 0.9 microns, or at least about 1 pm.
    The neutron detecting boron carbide layer may have a thickness in a range from about 0.3 μm to about 1.8 μm, preferably in a range from about 0.5 μm to about 1.6 μm, more preferably in a range from about 0.7 μm. pm to about 1.3 pm and most preferably in a range from about 0.9 pm to about 1.1 pm.
    The neutron detecting boron carbide layer can be coated directly on the coating surface of the substantially neutron transparent substrate.
    The neutron detecting boron carbide layer may be a B4C layer.
    The content of boron in the neutron detecting boron carbide layer may be at least about 65 at.%, Preferably about 70 at.%, More preferably about 75 at.% And most preferably in the range from about 80 at.% To about 100 at.%.
    According to a third aspect, use is made of the neutron detector component described above for detecting neutrons.
    According to a fourth aspect, a neutron detection device is provided comprising a number of neutron detector components arranged as a stack.
    The number of neutron detector components in the stack may be at least 2, preferably at least 10, more preferably at least 15, even more preferably at least 20 and most preferably at least 25. 10 15 20 25 25 535 805 10 the more efficient neutron detection efficiency of the neutron detection device. However, the increase from your components may in practice be so small that it does not justify the increased cost and complexity that comes with additional components.
    The detection efficiency of the neutron detection device is at least 30%, preferably at least 40%, more preferably at least 50%, even more preferably at least 60% and most preferably at least 70%.
    Brief Description of the Drawings The above, as well as other aspects, components and advantages of the present invention will become apparent from the following illustrative and non-limiting detailed description with reference to the accompanying drawings.
    F ig. 1 schematically shows a cross-sectional view of a neutron detector component according to a first embodiment.
    Fig. 2 is a fate diagram illustrating a method of manufacturing a neutron detector component.
    Fig. 3 schematically shows a substrate in a growth chamber, the substrate being specifically heated during the production of the neutron detector component.
    F ig. 4 shows a neutron detection device with N pieces of detector components arranged as a stack.
    In the drawings, the same reference numerals may be used for the same, similar or corresponding features even though the reference numerals refer to features in different embodiments.
    Description of embodiments Fig. 1 schematically shows a cross-sectional view of a neutron detector component 1 whose neutron detecting layer consists of a respective boron cube layer 2 comprising b-m (me) with thickness fenefunei on one of the opposite coating surfaces 3a, 3a 'of a substantially neutron-transparent substrate 3 which according to one embodiment is made of aluminum. In other embodiments, the neutron detecting boron carbide layer 2 may form only a sublayer or a smaller part of a larger neutron detecting layer or neutron detecting stack of layers, for example a layer in a neutron detection stack with fl your layers. In certain applications, such as for use in neutron detectors of e.g. fl ergaller type, a coating on two sides of the type shown is an advantage. For other applications, however, a substrate 3 with a coating on one side may be desirable and in other embodiments there may thus be a neutron detecting layer 2 on only one side of the substrate 3. The neutron detector component may have different shapes, which are typically determined by how the neutron detector with which the neutron detector component 1 is to be used is designed. However, the component is typically disk-shaped or in the form of a neutron detector plate or neutron detector blade which may have a flat structure but which in other embodiments may be curved. The component can also be, for example, tubular or wire-shaped.
    The neutron detecting boron carbide layer 2 can, as shown in the embodiment in fi g. 1, be arranged directly on the substantially neutron-transparent substrate 3. In other embodiments, one or more intermediate layers or gradient layers may be present, such as a layer to promote adhesion between the substantially neutron-transparent substrate 3 and the neutron-detecting boron carbide layer 2. Such an adhesive layer may be, for example, a layer created in situ by deposition from the same deposition source or separate deposition source (s) as the neutron detecting boron carbide layer 2. Such an adhesive layer may be metallic or ceramic and have any chemical composition, including the same as the substrate 3, the neutron detecting the boron carbide layer 2 or any other material of a larger neutron detecting layer comprising the neutron detecting boron carbide layer 2 as a sublayer or smaller part. The adhesive layer can also be created by in situ surface anodizing induced by ion, electron or photon radiation, or a combination thereof.
    The thickness, t Or less than 1.5 μm, or less than 1 μm. In one embodiment, it is preferably in the range of 1 μm to 2 μm.
    In the following, an embodiment of a method for manufacturing a neutron detector component 1 will be discussed with reference to a detailed embodiment where the main steps of the method are shown in the fl fate diagram in fi g. 2.
    In a first step 110, the substantially neutron-transparent substrate 3 is provided. In the detailed embodiment, a 0.5 mm thick rolled sheet of aluminum (Al) from the alloy EN AW-5083 is used as the substantially neutron-transparent substrate 3. In another embodiment, an aluminum foil with a thickness less than 0.1 mm can be used as the substantially neutron-transparent substrate 3. In further embodiments, substrate 3 with thicknesses up to fl your millimeters can be used. In the detailed embodiment, the Al sheet is washed in an ultrasonic bath by Neutracon followed by deionized water and then blow dried in Ng. In other embodiments, the substrate 3 may be washed in other ways, including, for example, degreasing in organic solvents and / or etching in an acid.
    In a step 120, the substantially neutron-transparent substrate 3 and the source or sources of coating material 16 are placed inside a coating chamber coating chamber, for example a coating chamber 10 as shown schematically in fi g. In the detailed embodiment, up to 24 Al-blades (20 x 180 mm in size) are used as substrate 3, and they are mounted on a test carousel, allowing planetary rotation about two axes and deposition on two sides, and placed in the coating chamber of a industrial CC800l9 deposition system (CemeCon AG, Germany).
    In a step 146 the coating chamber 10 is evacuated to a pressure of at most 6 mPa and in a step 144 at least one coating surface 3a of the substantially neutron-transparent substrate 3 is heated up to an elevated temperature of at least 100 ° C. Typically, the entire substrate 3 is heated up to this temperature, but it may be sufficient to heat only one coating surface 3a, Sa '. that is, the surface of the substrate 3 to be coated. Steps 146 and 144 may be performed sequentially and / or in whole or in part simultaneously. Once the pressure and the elevated temperature have been reached, in a step 148, coating of the substantially neutron-transparent substrate 3 with a neutron-detecting boron carbide layer 2 starts. connected to the deposition system comprising the coating chamber 10.
    This pressure can be called the system base, working or equilibrium pressure. The gas load is the sum of the residual gas remaining from the original atmosphere and the vapor pressure from the materials present in the coating chamber 10 and the leakage, degassing and penetrations.
    This pressure should be low enough to provide a clean surface of the substrate 3 and a reduced level of contaminants in the boron carbide coating 2 during deposition, and is typically higher than the final pressure of the vacuum pump system.
    To achieve this pressure, the coating chamber 10 in the deposition system in the detailed embodiment can be evacuated at full pump speed for 3 hours to reach a base pressure in the coating chamber 10 of 0.25 mPa before deposition. Pressures up to 6 mPa can be used in other embodiments. In further embodiments, pressures lower than 0.25 mPa may be used. The lower the said pressure, before and during the deposition, the better it is in general. In a step 150, the substantially neutron-transparent substrate 3 is coated with the neutron-detecting boron carbide layer 2 comprising boron by physical vapor deposition (PVD). The substrate 3 is preferably further heated even during this step 150. If the PVD method used uses a working gas, for example Ar, the pressure will increase. However, the partial pressure of the contaminants is preferably kept at correspondingly low levels when step 150 begins. In the detailed embodiment, the partial pressure of Ar is maintained at about 0.8 Pa. I fi g. 3, the schematic arrows 17 represent the direction in which material is vaporized from the coating material source 16 to the substrate 3 during the coating step 150. The PVD method may, as in the detailed embodiment, be DC magnetron sputtering. In other embodiments, other sputtering techniques may be used, such as radio frequency magnetron sputtering, high impulse magnetron sputtering, ion beam sputtering, reactive sputtering, ion-assisted deposition, high-target utilization sputtering, or gas-fate sputtering. In further embodiments, PVD may be used. 550 805 14 step 150 instead of magnetron sputtering techniques be other PDV techniques such as cathode arc deposition, electron beam physical vapor deposition, evaporation deposition or pulsed laser deposition. at least 100 ° C, 200 ° C, 300 ° C, 500 ° C or 600 ° C. It is also possible to vary the temperature of the substantially neutron-transparent substrate 3 during the coating step 150. In the detailed embodiment, the heating of the substrate 3 is effected by indirect means. heating, more specifically give by irradiating the substrate 3 with infrared radiation from a resistive heating element inside the coating chamber 10, which corresponds to that illustrated by heating element 12 in fi g. In the detailed embodiment, four sputtering targets of 1 ° B4C, attached to Cu components, are used as coating material sources 16. The sputtering targets 16 are operated with direct current and the highest power supplied to each magnetron is 4000 W. A smaller number of targets 16 can be used and the The power applied to each magnetron can range from 1500 W to 4000 W. In other embodiments, your sputtering target 16 can be used and / or higher power applied to each magnetron. In an alternative embodiment, separate sputtering targets 16 of 1 ° B and C may be used instead of 1 ° B4C.
    An increased velocity growth rate can be achieved during the coating step 150 by increasing the number of sputtering targets 16 and / or the power applied to each magnetron. The type of coating system used can also affect the growth rate. It may be advantageous to use as high a growth rate as the PVD deposition system used allows. A high growth rate can, for example, enable the use of less pure working gases during the coating of the boron carbide layer 2, i.e. a working gas with a higher partial pressure of pollutants in the working gas, and still produce a boron carbide layer 2 with low levels of pollutants. In general, however, it is of course advantageous to have as pure working gases as possible.
    Typical and possible growth rates can range from 0.1 to 500 μm / h. In a step 140, contaminants are removed from the coating chamber 10.
    The removal of contaminants 140 may be a separate step performed prior to and / or partially completely simultaneously with steps 144 and 146. In the detailed embodiment, for example, the heating and degassing of the coating chamber 10, which houses the Al the sheets as substrate 3 and the source or sources of coating material 16, during steps 144 and 146 by using heat from the heating of the substrate 3.
    The degassing can be carried out, for example, at room temperatures of up to 500 ° C or higher. In general, temperatures of at least about 300 ° C are often sufficient to remove most of the contaminants in step 140, although contaminants are removed even at temperatures of about 100 ° C. Different contaminants leave a surface at different temperatures. At 300 ° C, most water molecules are believed to have desorbed from the coating chamber 10, the substantially neutron-transparent substrate 3 and the source or sources of coating material 16. In an alternative embodiment, H 2 O contaminants can be removed using a method specifically designed to remove water contaminants electron beam, infrared radiation, ultraviolet or visible light radiation and ionizing radiation, or a combination of these methods. In a further alternative embodiment, a method specifically designed to remove water contaminants may be combined with preheating and degassing in the step of removing contaminants 140. If the step of removing contaminants 140 has a very short time cycle, desorption of water vapor, for example by ultraviolet light radiation, may be a faster process for removing H 2 O contaminants than by heating and degassing.
    Combining an effective removal of contaminants in the step of removing contaminants 140 with a high temperature of the substantially neutron-transparent substrate 3 during the coating step 150 and a high growth rate can result in a low content of contaminants in the neutron-detecting boron carbide layer 2. In the detailed embodiment the neutron detecting boron carbide layer 2 is deposited at a temperature of 400 ° C on the Al blades 3 using four sputtering targets of '° B4C 16 and a power applied to each magnetron of 4000 W. Under these conditions, the resulting neutron detecting boron carbide layers 2 may have a content impurities of 5.6 at.% and the content of 1 ° B can be as high as 77 at.%. Fig. 4 shows a neutron detecting device 30 with N pieces of neutron detector components 1a, 1b, 1c, N arranged in a stack 32. Each neutron detector component 1a, 1b, 1c, N can be a neutron detector component according to discussion above and can be prepared according to the procedure discussed above. The number of neutron detector components 1a, 1b, 1c, N may vary between embodiments. The larger the number of neutron detector components 1a, 1b, 1c, N in the stack 32, the higher the neutron detection efficiency of the neutron detection device 30 in general. However, the detection efficiency also depends on the thickness of the neutron detecting boron carbide layer 2, the neutron wavelength and the content of impurities in the boron carbide layer 2. The distance between the detector components 1a, 1b, 1c, N in the pile 32 in the neutron detection device 30 is in an embodiment about 2 cm. In other embodiments, the distance between the components 1a, 1b, 1c, N in the stack 32 may be up to 10 cm. In further embodiments, the distance between the components 1a, 1b, 1c, N may be in the order of millimeters.
    Instead of using separate neutron detector components 1a, 1b, 1c, N in the stack 32, the neutron detection device 30 may comprise a pleated neutron detector component 1 which by folding forms a stack 32 with a number of netron detecting boron carbide layers 2 from only one neutron detector component 1, instead of components 1a, 1b, 1c, N. In this embodiment, detector components 1a, 1b, 1c, N are used with neutron detecting boron carbide layers 2 coated on opposite sides 3a, 3a 'of the respective substrate 3 in the stack 32 of the neutron detection device 30, resulting in neutron detecting boron carbide layers 1a, 1 , 1c, N in the stack 32. In other embodiments, up to 25 detector components 1a, 1b, 1c, N with coating on two sides can be used. A full-scale neutron detection device 30 for large areas is in one embodiment designed to cover an active surface area of about 30 m2, which corresponds to about 1000 m2 of neutron detecting boron carbide layer 2 containing “° B.
    In one embodiment of the neutron detection device 30, 15 neutron detector components 1a, 1b, 1c, N are used in the stack 32, each neutron detector component 1a, 1b, 1c, N having a boron carbide layer thickness of 1 μm.
    This can result in a neutron detection device 30 with a detection efficiency of about 67%. The same structure as above but with a neutron detecting boron carbide layer with a thickness of 2 μm results in a lower detection efficiency. Excessively thick neutron detecting layer 2 reduces the likelihood that the 7Li and Heisotopes, which areotopes formed in the nuclear reaction between a neutron and 1 ° B, can leave the boron carbide layer 2 and be detected.
    In a further embodiment, detector components 1a, 1b, 1c, N with 1 μm thick coatings 2 are used in the stack 32, which results in a detection efficiency approaching a maximum of about 71%.
    Small changes in the wavelength of the incoming neutron do not affect the detection efficiency of the neutron detection device 30 to any great extent, but for an optimized neutron detection device 30, the number of detector components 1a, 1b, 1c, N (i.e. the number of neutron detecting layers 2) and the neutron detecting layers 2 t, is adapted to the current wavelength.
    Pictures and descriptions in the drawings and in the description above are exemplary and non-limiting. The invention is not limited to the embodiments shown. On the contrary, a number of modifications and variations are possible within the scope of the appended claims in addition to those already discussed. The neutron detecting boron carbide layer 2 may, for example, consist of a composition gradient. The neutron detector component 1 may consist of fl your layers of neutron-transparent layers and neutron-detecting boron carbide layers 2, which layers form double layers, triple layers or usually multi-layers. The present invention is defined by the claims and variants of the embodiments shown may be understood and practiced by those skilled in the art in the practice of the invention as claimed, for example, by studying the drawings, description and claims. Use of the word "includes" in the claims does not exclude other elements or steps, and use of the articles "a" or "an" does not exclude fl ertal. The existence of features in different subclaims does not in itself preclude the combination of features. A procedural requirement should not be construed as limiting solely because of the presented order of the steps in the procedure. Any possible combination of independent steps in each procedural requirement shall be construed as falling within the scope of the protection, although the independent steps must necessarily occur in a particular presentation scheme. Reference references in the requirements are for clarification and should not be construed as limiting the scope of protection of the requirements.
    权利要求:
    Claims (39)
    [1]
    A method of manufacturing a neutron detector component (1) comprising a neutron detecting boron carbide layer (2) comprising bores disposed on a substantially neutron transparent substrate (3), the method comprising: placing (120) the substantially neutron transparent substrate (3) and at least a coating material source (16) comprising carbon and boron within a coating chamber (10), to evacuate (146) the coating chamber (10) to a pressure of at most 6 mPa and to heat (144) at least one coating surface (3a) of the substantially the neutron-transparent substrate (3) in the coating chamber (10) to an elevated temperature of at least 300 ° C to about 660 ° C. starting (148) the coating of the neutron detecting boron carbide layer (2) comprising drilling on the substantially neutron transparent substrate (3) by physical vapor deposition in the form of magnetron sputtering using the at least one coating material source (16) when said pressure and elevated temperature have reached coating (150) the neutron detecting boron carbide layer (2) comprising boron to a desired thickness (t), and wherein the content of boron in the neutron detecting boron carbide layer (2) is at least about 60 at.%.
    [2]
    The method of claim 1, further comprising heating at least one coating surface (3a) of the substantially neutron-transparent substrate (3) during the coating (150) of the neutron-detecting boron carbide layer (2).
    [3]
    A method according to claim 2, wherein the heating of at least one coating surface (3a) of the substantially neutron-transparent substrate (3) during the coating (150) of the neutron-detecting boron carbide layer (2) comprises heating to at least said elevated temperature. 10 15 20 25 30 535 805 20
    [4]
    A method according to any one of the preceding claims, wherein the heating of at least one coating surface (3a) of the substantially neutron-transparent substrate (3) comprises specific heating thereof.
    [5]
    A method according to any one of the preceding claims, wherein the substantially neutron-transparent substrate (3) is a temperature-sensitive substrate with a melting point of at most about 660 ° C.
    [6]
    The method of any preceding claim, further comprising: removing (140) contaminants from the coating chamber (10), with the substantially neutron-transparent substrate (3) and the coating material source (16) located within, before and / or during the evacuation (146). ) of the coating chamber (10).
    [7]
    The method of claim 6, wherein the removal of contaminants (140) from the coating chamber (10) comprises heating and degassing the coating chamber (10) while maintaining the temperature (3) of the substantially neutron-transparent substrate below its melting temperature.
    [8]
    The method of claim 7, wherein the removal (140) of contaminants from the coating chamber (10) is performed during the evacuation (146) of the coating chamber (10).
    [9]
    The method of claim 8, wherein heating the coating chamber (10) comprises using heat from the heating (144) of at least one coating surface (3a) of the substantially neutron-transparent substrate (3).
    [10]
    A method according to any one of claims 7-9, wherein the heating of the coating chamber (10) comprises using a separate heat source other than that used for the heating (144) of at least one coating surface (3a) of the substantially neutron-transparent substrate (3). 10 15 20 25 30 535 805 21
    [11]
    A method according to any one of claims 7-10, wherein the heating of the coating chamber (10) comprises heating thereof to at least 100 ° C, or at least 200 ° C, or at least 300 ° C, or at least 400 ° C, or at least 500 ° C , or at least 600 ° C.
    [12]
    A method according to any one of claims 6-11, wherein the removal of contaminants (140) from the coating chamber (10) comprises the removal of contaminants of H 2 O.
    [13]
    A method according to claim 12, wherein the pollutants of H 2 O are removed by a process intended specifically to reduce the content of pollutants of H 2 O and are selected from a group consisting of electron beam, infrared radiation, radiation with ultraviolet light and visible light, ionic radiation, contact with a resistive heating elements or a combination of any of these methods.
    [14]
    A method according to any one of the preceding claims, wherein the pressure is at most 3 mPa, preferably at most 1.5 mPa or more preferably at most 0.75 mPa.
    [15]
    A method according to any one of the preceding claims, comprising coating opposing coating surfaces (3a, 3a ') of the substantially neutron-transparent substrate (3).
    [16]
    A method according to any one of the preceding claims, wherein the substantially neutron-transparent substrate (3) is electrically conductive.
    [17]
    A method according to any one of the preceding claims, wherein the substantially neutron-transparent substrate (3) comprises aluminum or aluminum alloys.
    [18]
    A method according to any one of the preceding claims, wherein the neutron detecting boron carbide layer (2) is electrically conductive. 10 15 20 25 30 535 805 22
    [19]
    A method according to any one of the preceding claims, wherein the desired thickness (t) of the neutron detecting boron carbide layer (2) is less than about 4 μm, or less than about 3 μm, or less than about 2 μm, or less than about 1 μm. 5 pm, or less than about 1.3 pm, or less than about 1.2 pm, or less than about 1.1 pm.
    [20]
    A method according to any one of the preceding claims, wherein the desired thickness (t) of the neutron detecting boron carbide layer (2) is at least about 0.2 μm, or at least about 0.4 μm, or at least about 0.6 μm, or at least about 0.6 μm. 0.8 μm, or at least about 0.9 μm or at least about 1 μm.
    [21]
    A method according to any one of the preceding claims, wherein the desired thickness (f) of the neutron detecting of the boron carbide layer (2) may be in a range from about 0.3 μm to about 1.8 μm, preferably in a range from about 0, 5 μm to about 1.6 μm, more preferably in a range from about 0.7 μm to about 1.3 μm and most preferably in a range from about 0.9 μm to about 1.1 μm.
    [22]
    A method according to any one of the preceding claims, wherein the coating surface (3a) of the substantially neutron-transparent substrate (3) is coated directly with the neutron-detecting boron carbide layer (2).
    [23]
    A method according to any one of claims 1-21, wherein the neutron detecting boron carbide layer (2) is coated on an intermediate layer or gradient layer, such as an adhesion promoting layer.
    [24]
    A method according to any one of the preceding claims, wherein the neutron detecting boron carbide layer (2) is a B4C layer.
    [25]
    A method according to any one of the preceding claims, wherein the at least one coating material source (16) comprises boron-10-enriched B4C (1 ° B4C). 10 15 20 25 30 535 805 23
    [26]
    A neutron detector component (1) for use in a neutron detector, wherein the neutron detector component is prepared according to the method described in any one of the preceding claims 1-15, which neutron detector component (1) comprises a neutron detecting boron carbide layer (2) comprising a boron arranged on a substantially neutron transparent substrate (3), the substantially neutron transparent substrate (3) being a temperature sensitive substrate having a melting temperature of at most about 660 ° C.
    [27]
    The neutron detector component (1) according to claim 26, wherein the substantially neutron-transparent substrate (3) is electrically conductive.
    [28]
    A neutron detector component (1) according to any one of claims 26-27, wherein the substantially neutron transparent substrate (3) comprises aluminum or aluminum alloys.
    [29]
    The neutron detector component (1) according to any one of claims 26-28, wherein the neutron detecting boron carbide layer (2) is electrically conductive.
    [30]
    The neutron detector component (1) according to any one of claims 26-29, wherein the neutron detecting boron carbide layer (2) has a thickness (t) of less than about 4 μm, or less than about 3 μm, or less than about 2 μm. or less than about 1.5 microns, or less than about 1.3 microns, or less than about 1.2 microns, or less than about 1.1 microns.
    [31]
    The neutron detector component (1) according to any one of claims 26 to 30, wherein the neutron detecting boron carbide layer (2) has a thickness (t) that is at least about 0.2 μm, or at least about 0.4 μm, or at least about 0.6 μm. μm, or at least about 0.8 μm, or at least about 0.9 μm or at least about 1 μm.
    [32]
    The neutron detector component (1) according to any one of claims 26-31, wherein the neutron detecting boron carbide layer (2) has a thickness (t) in the range of from about 0.3 μm to about 1.8 μm, preferably in a range of from about 0.5 μm to about 1.6 μm, more preferably in a range of from about 0.7 μm to about 1.3 μm, and most preferably in a range of from about 0.9 μm to about 1 μm. 1 pm.
    [33]
    A neutron detector component (1) according to any one of claims 26-32, wherein the neutron detecting boron layer (2) is coated directly on the coating surface (3a) of the substantially neutron transparent substrate (3).
    [34]
    A neutron detector component (1) according to any one of claims 26-33, wherein the neutron detecting boron carbide layer (2) is a B4C layer.
    [35]
    The neutron detector component (1) according to any one of claims 26-34, wherein the content of boron in the neutron detecting boron carbide layer (2) is at least about 65 at.%, Preferably at least about 70 at.%, More preferably at least about 75 at. % and most preferably in the range of from about 80 at.% to about 100 at.%.
    [36]
    Use of a neutron detector component (1) according to any one of claims 26-35 for detecting neutrons.
    [37]
    A neutron detection device (30) comprising a plurality of neutron detector components (1a, 1b, 1c, N) according to any one of claims 26 to 35 arranged in a stack (32).
    [38]
    The neutron detection device (30) according to claim 37, wherein the number of neutron detector components (1a, 1b, 1c, N) in the stack (32) is at least 2, preferably at least 10, more preferably at least 15, even more preferably at least 20 and most preferably at least 25 .
    [39]
    The neutron detection device (30) according to any one of 37 to 38, wherein the detection efficiency of the neutron detection device (30) is at least 30%, preferably at least 40%, more preferably at least 50%, even more preferably at least 60% and most preferably at least 70%.
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    同族专利:
    公开号 | 公开日
    SE1250745A1|2012-08-20|
    EP2726640B1|2021-12-08|
    DK2726640T3|2022-02-21|
    CA2839780A1|2013-01-03|
    US20140299781A1|2014-10-09|
    EP2726640A1|2014-05-07|
    EP2726640A4|2015-02-25|
    WO2013002697A1|2013-01-03|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US4587088A|1983-08-26|1986-05-06|Westinghouse Electric Corp.|Coating a nuclear fuel with a burnable poison|
    US6123797A|1995-06-23|2000-09-26|The Dow Chemical Company|Method for coating a non-wetting fluidizable and material onto a substrate|
    US6771730B1|1998-11-25|2004-08-03|Board Of Regents Of University Of Nebraska|Boron-carbide solid state neutron detector and method of using the same|
    US6919576B2|2002-02-04|2005-07-19|Bechtel Bwxt Idaho Llc|Composite neutron absorbing coatings for nuclear criticality control|
    US6774013B2|2002-11-06|2004-08-10|Board Of Regents Of University Of Nebraska|N-type boron-carbide semiconductor polytype and method of fabricating the same|
    EP1578375B1|2002-11-13|2018-01-03|Proportional Technologies, Inc.|Boron coated straw neutron detector|
    WO2004112072A2|2003-05-29|2004-12-23|Nova Scientific, Inc.|Electron multipliers and radiation detectors|
    US7233007B2|2004-03-01|2007-06-19|Nova Scientific, Inc.|Radiation detectors and methods of detecting radiation|
    WO2006085307A1|2005-02-08|2006-08-17|Yissum Research Development Company Of The Hebrew University Of Jerusalem|Solid-state neutron and alpha particles detector and methods for manufacturing and use thereof|
    EP2144089A4|2007-04-24|2016-11-30|Toshiba Kk|Radiography measuring device and radiography measuring method|
    WO2008140747A1|2007-05-10|2008-11-20|Seldon Technologies, Inc.|Methods of gas confinement within the voids of crystalline material and articles thereof|
    US8492730B2|2009-06-15|2013-07-23|Los Alamos National Security, Llc|Neutron detectors comprising ultra-thin layers of boron powder|
    US8569708B2|2009-01-30|2013-10-29|Alliance For Sustainable Energy, Llc|High sensitivity, solid state neutron detector|
    US8569710B2|2009-06-02|2013-10-29|Proportional Technologies, Inc.|Optimized detection of fission neutrons using boron coated straw detectors distributed in moderator material|
    US8445859B2|2009-06-15|2013-05-21|Los Alamos National Security, Llc|Neutron detectors comprising boron powder|
    US8237161B2|2010-08-10|2012-08-07|North Dakota State University Research Foundation|Amorphous boron carbide films for p-n junctions and method for fabricating same|
    US8973257B2|2011-09-15|2015-03-10|Material Innovations, Inc.|Method of making a neutron detector|
    US8729487B2|2011-09-15|2014-05-20|Material Innovations, Inc.|Neutron detector and method of making|CN103132040B|2013-03-12|2014-11-26|四川大学|Preparation process method of BC4 conversion film for 4H-SiC-based neutron detector|
    EP2975154A1|2014-07-14|2016-01-20|Helmholtz-Zentrum Geesthacht Zentrum für Material- und Küstenforschung GmbH|Method for the production of neutron converters|
    KR101616403B1|2015-05-14|2016-04-28|세종대학교산학협력단|Nutron absorption plate with boron-carbide multi-coated layer|
    FR3038988B1|2015-07-17|2019-04-19|Centre National De La Recherche Scientifique Cnrs|DETECTOR UNDER IRRADIATION OF NUCLEAR PARTICLES|
    JP5997869B1|2015-09-09|2016-09-28|野洲メディカルイメージングテクノロジー株式会社|Thermal neutron detector, scintillator unit and thermal neutron detection system|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    PCT/SE2011/050891|WO2013002697A1|2011-06-30|2011-06-30|A method for producing a neutron detector component comprising a boron carbide layer for use in a neutron detecting device|
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